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Principle of LPCVD Technology (low-pressure CVD)

Chemical Vapour Deposition (CVD) is a generic name for a group of processes that may be defined as the deposition of a solid on a heated surface from a chemical reaction during the vapour phase. Typical temperatures: 700 – 1000°C.

Example of a LPCVD system

Principle of a production size low-pressure CVD system (LPCVD), where the reactant gases (from gaseous, liquids or solid precursors) are supplied into a reaction chamber at a suitably determined temperature and pressure.

Example of a LPCVD system

In the reactor, the gases come into contact with a heated substrate, so they react and form a solid layer.

After the reaction, the exhaust gas contains mainly HCl which will react with the sodium hydroxide (NaOH) during the coating process in the Liquid Ring Vacuum Pump and at an additional gas washer in the neutralization system.

The metal sub chlorides, condensed by a cooling trap during the coating process, are neutralized after the coating process in a service system.

The total emission is compliant with ATEX and the technical guidelines of clean air control (German TA Luft).

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