LLS EVO II Outstanding process and substrate flexibility combined with excellent reproducibility and film uniformity.

Main Features
  • Process Flexibility: DC, RF, RF/DC combined, DC pulsed, Co-sputtering up to three cathodes
  • Excellent reproducibility and film uniformity for consistent production quality.
  • Degas and etch in load chamber isolates process chamber from contaminants
  • Easy convertible to various substrate sizes within 5 minutes
  • System with 5 cathodes is back in production within 5 hours (inlcuding traget and shields exchange, pump time, target burn in)

Highest process flexibility with 5 sources configurabel for any of the following options:

  • DC sputtering: Conductive materials and low doped reactive processes
  • RF sputtering: Dielectric materials and high doped reactive processes
  • RF/DC combined sputtering: Increased rate of reactive sputtering
  • Pulsed DC sputtering: Improved performance of high and low doped reactive processes. Stress control for some pure metals (e.g. Cr, NiV)
  • Co-sputtering: Parallel operation up to three sources which enables: Increased rates, mixtures of alloys and continous phasing of materials
  • Reliable industry proven production system
  • Moveable shutter:
    Avoids cross-contamination between sources
    Individual pre-sputtering
  • Unique valve separates load-lock and main chamber avoiding particles and gaseous contamination, assuring repeatable process conditions
  • Compact footprint (rack cabinets/pumps/compressors available in extended layout +15m)
  • Three main units allow easy and fast installation
  • Easy convertible for different substrate sizes and shapes within 5 minutes, customised substrate tooling:
    Full face deposition
    Customised edge exclusion, edge masking, shadow masking
    Different substrate sizes within same batch possible
  • Batch capacity: 
    Standard wafer: 2" 132; 3" 72; 4" 36; 5" 30; 6" 12; 8" 9
    Pieces of substrates until max. 200 x 230mm (9 per batch)  
Substrate Handling
  • Manual or fully automatic cassette-to-cassette handling (CTC) - available as an option in two versions: unmasked and masked including barcode reading
  • Substrate handling in ambient pressure
  • No substrate transport inside the process chamber. Substrates are handled only as they enter or exit the load lock chamber 
  • Load-lock chamber for degassing, RF or ion beam etching, assuring clean surfaces and good adhesion
  • Optimized rectangular cathode design for highest B-field uniformity resulting in better magnetic film properties and lifetime
  • Vertical sputtering generates fewer particles and allows longer kit lifetime
  • Optimized magnet array increase target lifetime (e.g., Al +70%)
  • Temperature control (e.g., TiW UBM stack <120°C)
  • Segment sputtering: enables deposition on a single substrate (for precious materials / R&D)
  • Substrate heating (350°C in MC, 200°C in LC -power controlled)
Control System
  • Operator friendly Windows™ 7 based graphical user interface (on separate PC with 'RAID 1' mirroring) displays status and trends, tracks and registers process information, manages alarms and recipe handling
  • Siemens Simatic Microbox PC for real time control of all machine functions
  • SECS/GEM Interface (option)
  • Industry standard diagnostic and control equipment option, e.g. RGA. Data logging and run-protocols are an integral part of the control system
  • Media consumtion reporting (ISO 14001)
  • Operationg instructions available in English, German & Japanese language
  • Integrated documentation comprises all documentation - availble on one disc (DocuCat) and online


Substrate size Flexibility up to max 200 mm x 280 mm square; up to 15mm thickness
Batch capacity
(frontside loaded)
2 inch 132 substrates (frontside loaded)
3 inch 60 substrates
4 inch 36 substrates
5 inch 15 (two row 30) substrates
6 inch 12 (two row 24) substrates
8 inch 9 substrates
Magnetron source AKQ 5 x 15 inch (127 x 381 mm target)
Target/substr. distance standard ~70mm (long-throw up to ~200mm)
DC pulse Frequency 50–350 kHz
Heater Process MC* max 4 kW, power controlled up to 350°C
Degas LC** max 2 kW, power controlled up to 200°C
Etching RF etch >18 Å/kW min
Ion beam etch >23 Å/min
Vacuum Base pressure LC <5x10 –7 mbar (CTI 8F on board)
Base pressure MC <1x10 –7 mbar (CTI 8F on board)
Substrate handling Manual or optional automatic cassette-to-cassette (masked or unmasked)
Technical Data
Electrical data 3 x 400/230 V AC, 50/60 Hz, ~40 kVA
Cooling Water 4-7 bar (58-102 psi), 18–25°C, 85l/min
Compressed dry air 6–8 bar (87–116 psi)
Process gases Ar, N2, O2, (H2 for etch)
Weight ~ 4.000 kg (net)
Footprint 2.10m x 2.51m x 2.07m (W x D x H)
Transport dimension*** 2.10m x 1.43m x 2.14m (W x D x H)

* MC = Main chamber
** LC = Load-lock chamber
*** biggest supply chain module
Dimensions in mm