Innovation has a name - Oerlikon Systems

LLS EVO II LLS EVO II – Outstanding process and substrate flexibility combined with excellent reproducibility and film uniformity

Main Features

• Process Flexibility: DC, RF, RF/DC combined, DC pulsed, Co-sputtering up to three cathodes
• Excellent reproducibility and film uniformity for consistent production quality.
• Degas and etch in load chamber isolates process chamber from contaminants
• Easy convertible to various substrate sizes within 5 minutes
• System with 5 cathodes is back in production within 5 hours (inlcuding traget and shields exchange, pump time, target burn in)

Source

Highest process flexibility with 5 sources configurabel for any of the following options:

• DC sputtering: Conductive materials and low doped reactive processes
• RF sputtering: Dielectric materials and high doped reactive processes
• RF/DC combined sputtering: Increased rate of reactive sputtering
• Pulsed DC sputtering: Improved performance of high and low doped reactive processes. Stress control for some pure metals (e.g. Cr, NiV)
• Co-sputtering: Parallel operation up to three sources which enables: Increased rates, mixtures of alloys and continous phasing of materials

Hardware

• Reliable industry proven production system
• Moveable shutter:
  Avoids cross-contamination between sources
  Individual pre-sputtering
• Unique valve separates load-lock and main chamber avoiding particles and gaseous contamination, assuring repeatable process conditions
• Compact footprint (rack cabinets/pumps/compressors available in extended layout +15m)
• Three main units allow easy and fast installation

Substrates

• Easy convertible for different substrate sizes and shapes within 5 minutes, customised substrate tooling:
  Full face deposition
  Customised edge exclusion, edge masking, shadow masking
  Different substrate sizes within same batch possible
• Batch capacity: 
  Standard wafer: 2" 132; 3" 72; 4" 36; 5" 30; 6" 12; 8" 9
  Pieces of substrates until max. 200 x 230mm (9 per batch)  

Substrate Handling

• Manual or fully automatic cassette-to-cassette handling (CTC) - available as an option in two versions: unmasked and masked including barcode reading
• Substrate handling in ambient pressure
• No substrate transport inside the process chamber. Substrates are handled only as they enter or exit the load lock chamber 

Process

• Load-lock chamber for degassing, RF or ion beam etching, assuring clean surfaces and good adhesion
• Optimized rectangular cathode design for highest B-field uniformity resulting in better magnetic film properties and lifetime
• Vertical sputtering generates fewer particles and allows longer kit lifetime
• Optimized magnet array increase target lifetime (e.g., Al +70%)
• Temperature control (e.g., TiW UBM stack <120°C)
• Segment sputtering: enables deposition on a single substrate (for precious materials / R&D)
• Substrate heating (350°C in MC, 200°C in LC -power controlled)

Control System

• Operator friendly Windows™ 7 based graphical user interface (on separate PC with 'RAID 1' mirroring) displays status and trends, tracks and registers process information, manages alarms and recipe handling
• Siemens Simatic Microbox PC for real time control of all machine functions
• SECS/GEM Interface (option)
• Industry standard diagnostic and control equipment option, e.g. RGA. Data logging and run-protocols are an integral part of the control system
• Media consumtion reporting (ISO 14001)

Documentation

• Operationg instructions available in English, German & Japanese language
• Integrated documentation comprises all documentation - availble on one disc (DocuCat) and online

 

Specifications
Substrate size	Flexibility up to max 200 mm x 280 mm square; up to 15mm thickness
Batch capacity (frontside loaded)	2 inch 132 substrates (frontside loaded) 3 inch 60 substrates 4 inch 36 substrates 5 inch 15 (two row 30) substrates 6 inch 12 (two row 24) substrates 8 inch 9 substrates
Magnetron source	AKQ 5 x 15 inch (127 x 381 mm target)
Target/substr. distance	standard ~70mm (long-throw up to ~200mm)
DC pulse	Frequency 50–350 kHz
Heater	Process MC* max 4 kW, power controlled up to 350°C Degas LC** max 2 kW, power controlled up to 200°C
Etching	RF etch >18 Å/kW min Ion beam etch >23 Å/min
Vacuum	Base pressure LC <5x10 –7 mbar (CTI 8F on board) Base pressure MC <1x10 –7 mbar (CTI 8F on board)
Substrate handling	Manual or optional automatic cassette-to-cassette (masked or unmasked)

Technical Data
Electrical data	3 x 400/230 V AC, 50/60 Hz, ~40 kVA
Cooling Water	4-7 bar (58-102 psi), 18–25°C, 85l/min
Compressed dry air	6–8 bar (87–116 psi)
Process gases	Ar, N2, O2, (H2 for etch)
Weight	~ 4.000 kg (net)
Footprint	2.10m x 2.51m x 2.07m (W x D x H)
Transport dimension***	2.10m x 1.43m x 2.14m (W x D x H)

* MC = Main chamber
** LC = Load-lock chamber
*** biggest supply chain module
Dimensions in mm