CLUSTERLINE® 200 II Bulk-Acoustic-Wave and Surface-Acoustic-Wave Applications

Addressing the requirements of the resonator market

BAW (FBAR/SMR) filters are key components in the RF front-ends of wireless mobile communication devices. They rely on the deposition of thin piezo-electric films, as well as metal electrodes, where film properties and uniformity are key to the device operation. Oerlikon has developed a dedicated resonator manufacturing solution based on its CLUSTERLINE 200 II platform, which includes the deposition of high quality piezo-electric materials like Aluminum-nitride (AlN) and the associtaed electrodes (Mo, Pt, Al, W, Ti, ...) and dielectric (SiO2) films.

CLUSTERLINE 200 II  - Benefits
  • Single wafer, reactive pulsed-DC magnetron sputtering technology for 100, 150 and 200mm wafer sizes
  • Sputter source for high uniformity piezo and electrode films, enabling dynamic adjustment of film uniformity over target life
  • Excellent control of process pressure, gas flow and temperature uniformities for best piezoelectric film properties
  • Integrated soft/clean-etch process module for surface treatment and layer smoothing
  • RF bias for piezo layer stress control
  • Excellent process stability at high deposition rates for maximized throughput and yield control
AlN film properties

Typical AlN orientation obtained on various sublayers

Sublayer Si or Si02 Mo P
AIN c-axis orientation FWHM < 1.0° < 1.5° < 1.5°

Typical AlN thickness properties (150mm wafer)

Within-wafer uniformity < 1.0% 3σ
Wafer-to-wafer repeatability < 1.5% 3σ
Deposition rate Up to 100nm/min-1

Legend: SEM cross-section image showing the SMR-type film stack

PECVD Plasma Box for SAW passivation - Benefits
  • Excellent temperature uniformity and control thanks to Plasma Box concept - No temperature gradient between front and backside of wafer
  • High repeatability of material properties due to self-cleaning capability
  • Large process window
  • Large expertise in nitride deposition, SiN PECVD layer properties meeting SAW passivation requirements