Oerlikon Solar
KAI 1200
Amorphous and Micromorph® High Performance Layers for Large Area Thin Film Silicon Solar Modules
The Oerlikon Solar KAI 1200 is a fully automated PECVD system for the industrial mass production of large area (1.4m2) solar modules. Designed for the deposition of amorphous or microcristalline photovoltaic absorption layers, this system forms a central part of the tield-proven FAB 1200 production line. High throughput and yield at low cost are accomplished by the unique cluster-batch design and the patented Plasma Box®.
The KAI 1200 cluster batch system simultaneously processes 28 m2 of solar modules in a single production run.
Highlights
Proven industrial volume production with fast ramp up
- Amorphous and microcrystalline process option
- Fully qualified mass production (TÜV-certified production lines)
- Strong patent portfoglio
- In series production since 2002
Yield and throughput
- High throughput with best layer quality using VHF technology
- Single-chamber processing using the patented Plasma Box®
One tool platform
- Mail platform identical for amorphous and microcrystalline layers
- Common spare parts
Features and Benefits
- Batch handling and single chamber processing with patented Plasma Box® for lower cost of owernership
- 28 m2 of glass processed in one production run for unbeatable productivity
- Industrial production interface with fully automated panel handling and alignment
- Plasma Box® with VHF technology for higher deposition rate and lower gas consumption
- Complete PV absorber deposited in single chamber process, no cross contamination
- Single junction a-Si technology with best-in-class performance
- a-Si PIN-PIN diodes in one process step for higher module power
- Microcrystalline layers for Micromorph® cells with up to 50% efficiency increase
- Optimized crystal uniformity at transition phase for high performance Micromorph®
- Active heating and cooling for rapid substrate transfer
- Industrial production interface with fully automated panel
- R&D platforms available with compatible process technology
Specifications | |
| System Architecture | cluster-batch |
| Substrate size | 1.1 x 1.3 m2 |
| Reactor surface area | 28 m2 |
| Layers | a-Si, n+ a-Si, p+ a-Si, p+ µc-Si |
| Tact time | < 1.7 min for amorphous layers |
| Tact time | < 3.4 min for microcrystalline layers |
| Plasma frequency | 40 MHz |
| Footprint | 10 x 14 m2 |
| Weight | approx. 70 tons |
| System Control | Graphical user interface |
Layout
